1 to 7 of 7 literature results

• Electronic transport in nanometre-scale silicon-on-insulator membranes.

  The widely used 'silicon-on-insulator' (SOI) system consists of a layer of single-crystalline silicon supported on a silicon dioxide substrate. When t…

  Authors: Pengpeng Zhang, Emma Tevaarwerk, Byoung-Nam Park, Donald E Savage, George K Celler, Irena Knezevic, Paul G Evans, Mark A Eriksson, Max G Lagally

  Source: Nature. 2006 Feb 9

  View Full Text

• Materials science: a 'bed of nails' on silicon.

  Authors: Max G Lagally, Robert H Blick

  Source: Nature. 2004 Nov 25

  View Full Text

• Elastically relaxed free-standing strained-silicon nanomembranes.

  Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier…

  Authors: Michelle M Roberts, Levente J Klein, Donald E Savage, Keith A Slinker, Mark Friesen, George Celler, Mark A Eriksson, Max G Lagally

  Source: Nature materials. 2006 May

  View Full Text

• Electronically driven structure changes of Si captured by femtosecond electron diffraction.

  The excitation of a high density of carriers in semiconductors can induce an order-to-disorder phase transition due to changes in the potential-energy…

  Authors: Maher Harb, Ralph Ernstorfer, Christoph T Hebeisen, Germán Sciaini, Weina Peng, Thibault Dartigalongue, Mark A Eriksson, Max G Lagally, Sergei G Kruglik, R J Dwayne Miller

  Source: Physical review letters. 2008 Apr 18

  View Full Text

• Thin-film cliffhanger.

  Authors: Max G Lagally, Zhenyu Zhang

  Source: Nature. 2002 Jun 27

  View Full Text

• New strategy for synthesis and functionalization of carbon nanoparticles.

  We describe a novel "one-step" combined synthesis and functionalization of carbon nanoparticles, using a new generation of all-in-one small submerged-…

  Authors: Hongquan Jiang, Feng Chen, Max G Lagally, Ferencz S Denes

  Source: Langmuir : the ACS journal of surfaces and colloids. 2010 Feb 2

  View Full Text

• Mechano-electronic superlattices in silicon nanoribbons.

  Significant new mechanical and electronic phenomena can arise in single-crystal semiconductors when their thickness reaches nanometer dimensions, wher…

  Authors: Minghuang Huang, Clark S Ritz, Bozidar Novakovic, Decai Yu, Yu Zhang, Frank Flack, Donald E Savage, Paul G Evans, Irena Knezevic, Feng Liu,…

  Source: ACS nano. 2009 Mar 24

  View Full Text